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| Excelics PRELIMINARY DATA SHEET * * * * * * * +25.0dBm TYPICAL OUTPUT POWER 10.5dB TYPICAL POWER GAIN AT 12GHz HIGH BVgd FOR 10V BIAS 0.3 X 600 MICRON RECESSED "MUSHROOM" GATE Si3N4 PASSIVATION ADVANCED EPITAXIAL DOPING PROFILE PROVIDES HIGH POWER EFFICIENCY, LINEARITY AND RELIABILITY Idss SORTED IN 10mA PER BIN RANGE EFC060B Low Distortion GaAs Power FET 350 50 D 48 350 100 40 S G S 95 50 ELECTRICAL CHARACTERISTICS (Ta = 25 OC) SYMBOLS P1dB G1dB PAE Idss Gm Vp BVgd BVgs Rth PARAMETERS/TEST CONDITIONS Output Power at 1dB Compression f=12GHz Vds=10V, Ids=50% Idss f=18GHz Gain at 1dB Compression f=12GHz Vds=10V, Ids=50% Idss f=18GHz Power Added Efficiency at 1dB Compression Vds=10V, Idss=50% Idss f=12GHz Saturated Drain Current Transconductance Pinch-off Voltage Vds=3V, Vgs=0V Vds=3V, Vgs=0V Vds=3V, Ids=1.5mA Chip Thickness: 75 13 microns All Dimensions In Microns MIN 23.0 9.0 TYP 25.0 25.0 10.5 8.0 35 MAX UNIT dBm dB % 80 50 130 70 -2.5 180 mA mS -4.0 V V V o Drain Breakdown Voltage Igd=1.0mA Source Breakdown Voltage Igs=1.0mA Thermal Resistance (Au-Sn Eutectic Attach) -15 -10 -20 -17 75 C/W MAXIMUM RATINGS AT 25OC SYMBOLS PARAMETERS ABSOLUTE1 CONTINUOUS2 Drain-Source Voltage 14V 10V Vds Gate-Source Voltage -8V -4.5V Vgs Drain Current Idss 150mA Ids Forward Gate Current 15mA 2.5mA Igsf Input Power 23dBm @ 3dB Compression Pin o Channel Temperature 175 C 150oC Tch o Storage Temperature -65/175 C -65/150oC Tstg Total Power Dissipation 1.8W 1.5W Pt Note: 1. Exceeding any of the above ratings may result in permanent damage. 2. Exceeding any of the above ratings may reduce MTTF below design goals. Excelics Semiconductor, Inc., 2908 Scott Blvd., Santa Clara, CA 95054 Phone: (408) 970-8664 Fax: (408) 970-8998 Web Site: www.excelics.com EFC060B PRELIMINARY DATA SHEET Low Distortion GaAs Power FET S-PARAMETERS 10V, 1/2 Idss Freq GHz 1.000 2.000 3.000 4.000 5.000 6.000 7.000 8.000 9.000 10.000 11.000 12.000 13.000 14.000 15.000 16.000 17.000 18.000 19.000 20.000 21.000 22.000 23.000 24.000 25.000 26.000 S11 Mag 1.000 0.976 0.948 0.924 0.896 0.879 0.869 0.856 0.843 0.835 0.826 0.829 0.825 0.826 0.826 0.834 0.839 0.846 0.844 0.845 0.851 0.856 0.866 0.869 0.874 0.876 S11 Ang -22.2 -43.5 -64.1 -82.9 -100.8 -115.2 -127.1 -136.5 -145.4 -154.1 -162.9 -170.1 -176.9 176.5 169.4 162.5 157.6 153.9 150.1 144.5 134.1 129.4 126.8 124.1 121.9 118.6 S21 Mag 4.497 4.274 3.993 3.676 3.334 3.005 2.720 2.487 2.291 2.119 1.955 1.826 1.706 1.614 1.508 1.412 1.331 1.274 1.218 1.151 1.055 0.975 0.907 0.841 0.775 0.711 S21 Ang 162.6 147.4 132.7 119.0 105.8 94.5 84.8 75.7 67.0 58.4 50.4 42.7 35.1 27.7 20.1 12.6 5.7 -1.0 -8.7 -16.6 -24.7 -31.0 -37.7 -43.7 -49.4 -55.1 S12 Mag 0.022 0.042 0.059 0.072 0.080 0.086 0.089 0.091 0.092 0.092 0.092 0.091 0.091 0.091 0.089 0.088 0.088 0.089 0.089 0.089 0.086 0.084 0.081 0.078 0.077 0.074 S12 Ang 75.2 65.1 53.7 43.1 34.2 26.7 20.4 15.0 9.0 4.2 0.3 -3.8 -7.5 -10.6 -15.0 -17.6 -20.3 -22.6 -25.8 -29.1 -31.9 -32.8 -34.5 -34.4 -34.9 -32.9 S22 Mag 0.568 0.553 0.524 0.492 0.446 0.418 0.398 0.380 0.374 0.384 0.395 0.409 0.415 0.426 0.435 0.439 0.432 0.422 0.422 0.444 0.476 0.502 0.543 0.574 0.618 0.660 S22 Ang -9.8 -19.6 -28.6 -36.9 -45.2 -52.3 -59.4 -67.9 -78.0 -86.9 -93.9 -100.1 -106.5 -113.9 -119.9 -124.7 -131.7 -141.5 -154.1 -166.5 -168.6 -177.0 175.0 168.2 162.2 158.1 Note: The data included 0.7 mils diameter Au bonding wires: 1 gate wires, 15 mils each; 1 drain wires, 20 mils each; 4 source wires, 7 mils each. |
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